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Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars

Md. J. Miah, A. Boni, D. Martin, P. Della Casa, and P. Crump

Published in:

27th International Semiconductor Laser Conference (ISLC), Potsdam, Germany, Oct. 10-14, ISBN 978-1-6654-4133-9, TuP2.1 (2021).

Abstract:

1-cm single quantum well laser bars at 910-940nm wavelengths are presented, using extremely asymmetric layer designs for increased power. In quasi-CW testing, bars with 4mm resonators provide output power >1.8kW with 67% maximum efficiency at 298K and >2.2kW with 74% maximum efficiency at 203K.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

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