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Patente

High-Power Tensile-Strained GaAsP-AlGaAs Quantum-Well Lasers Emitting between 715 and 790 nm

G. Erbert, F. Bugge, A. Knauer, J. Sebastian, A. Thies, Hans Wenzel, M. Weyers, and G. Tränkle

Published in:

IEEE J. Sel. Top. Quantum Electron., vol. 5, no. 3, pp. 780-784 (1999).

Abstract:

Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavity structures were studied. In the wavelength range between 715 and 790 nm, very high output power and excellent conversion efficiencies of broad-area lasers have been obtained.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

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