High-Power High-Efficiency 1150-nm Quantum-Well Laser
G. Erbert , F. Bugge, J. Fricke, P. Ressel, R. Staske, B. Sumpf, H. Wenzel, M. Weyers, and G. Tränkle
Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 11, no. 5, pp. 1217-1222 (2005).
Abstract:
Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on the laser performance. Using a thick GaAs waveguide layer broad area devices with low vertical divergence of 20° FWHM and reliable operation at a power level of 80-mW/µm stripe width were demonstrated.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Index Terms:
Gallium arsenide, high-power lasers, semiconductor lasers, waveguides.
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