High-power edge-emitting laser diode with narrow vertical beam divergence
N.N. Ledentsov1, V.A. Shchukin1, I.I. Novikov2, N.Yu. Gordeev2, M.V. Maximov2, Y.M. Shernyakov2, A.S. Pausov2, K. Posilovic3, T. Kettler1, D. Bimberg3, F. Bugge4, and M. Weyers4
Published in:
Electron. Lett., vol. 47, no.24, pp. 1339-1341 (2011).
Abstract:
10.5 W pulsed optical power with ultra-narrow vertical beam divergence (full width at full maximum ~1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.
1 PBC Lasers GmbH, Berlin, Germany
2 A.F. Ioffe Institute, St. Petersburg, Russia
3 Technische Universität Berlin, Institut für Festkoerperphysik Sekr. EW 5-2, Berlin, Germany
4 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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