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High power CW 780 nm diode lasers for use in additive manufacturing

S. Arslan, P.S. Basler, B. King, J. Glaab, A. Maaßdorf, D. Martin, A. Knigge, A. Ginolas, S. Kreutzmann and P. Crump

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Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2023), Munich, Germany, Jun. 26-30, ISBN: 979-8-3503-4599-5, cb-11-3 (2023).


High-power GaAs-based diode lasers are critical components for material processing applications, and have high potential for use in additive manufacturing systems (AM) [1]. High power continuous-wave (CW) diode lasers with operating wavelength λ ∼ 780 nm can enable higher build rates for AM of Ni-, Fe-, and especially Al-alloys due to the higher absorption compared to conventional λ = 1070 nm [2]. High output power Pout per device and high conversion efficiency ηE are required for reduced costs for industry in €/W however increasing Pout and ηE is challenging for 780 nm due to the available semiconductor materials.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

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