High-power and high temperature long-term stability of Al-free 950 nm laser structures on GaAs
G. Beister, G. Erbert, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske and H. Wenzel
Published in:
Electron. Lett., vol. 35, no. 19, pp. 1641-1642 (1999).
Abstract:
Al-free InGaAs/InGaAsP/InGaP broad area lasers emitting at 950nm show low degradation rates below 6x10-5/h, under conditions of 1.5W emission power per 100 µm stripe width at 50°C and 4W/200µm at room temperature.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
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