High-Performance Laser Diodes With Emission Wavelengths Above 1100 nm and Very Small Vertical Divergence of the Far Field
F. Bugge, H. Wenzel, B. Sumpf, G. Erbert, M. Weyers
Published in:
IEEE Photonics Technol. Lett., vol. 17, no. 6, pp. 1145-1147 (2005).
Abstract:
The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With very thick waveguide layers, more than 95% of the output power is enclosed in an angle smaller than 35°. This allows the use of fast axis collimators with a small numerical aperture. Broad area laser diodes with 100-µm stripe width, an optimized doping profile, and a double QW emit more than 12 W and show reliable operation at 5 W.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
Epitaxial growth, laser reliability, quantum well (QW) lasers,semiconductor lasers.
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