High peak power pulses from dispersion optimised modelocked semiconductor laser
J.C. Balzer1, T. Schlauch1, A. Klehr2, G. Erbert2, G. Tränkle2 and M.R. Hofmann1
Published in:
Electron. Lett., vol. 49, no. 13, pp. 838-839 (2013).
Abstract:
Presented is an electrically pumped passively modelocked edge-emitting semiconductor laser system in an external cavity setup with intracavity dispersion management. This concept, in combination with a pulse compressor, provides pulses as short as 158 fs. By expanding the setup with a tapered diode laser amplifier, peak powers up to 6.5 kW were achieved in the 850 nm wavelength range.
1 Lehrstuhl für Photonik und THz-Technologie, Ruhr-Universität Bochum, Bochum D-44780, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
semiconductor lasers; optical dispersion; laser cavity resonators; high-speed optical techniques; laser mode locking; optical pumping; optical pulse compression.
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