High-Efficiency Broad-Ridge Waveguide Lasers
M. Wilkens1, H. Wenzel1, J. Fricke1, A. Maaßdorf1, P. Ressel1, S. Strohmaier2, A. Knigge1, G. Erbert1, and G. Tränkle1
IEEE Photonics Technol. Lett., vol. 30, no. 6, pp. 545-548 (2018).
Highly efficient single-spatial mode lasers with watt-level output power in the 9xx-nm wavelength range are of great interest for a variety of applications. We experimentally investigate the influence of the mesa widths on the electro-optical properties of ridge-waveguide lasers, based on an extreme double asymmetric epitaxial structure. These properties are, for example, the conversion efficiency and the maximum power of single-lateral mode operation (kink power). At an output power of almost 1 W, single-lateral mode operation with the highest efficiency of 60% was achieved with a 10-µm ridge-width laser. The highest peak efficiency of 62% and the highest output power of 2.7 W with still 59% efficiency were yielded by a laser with a ridge width of 15 µm, at the expense of a slightly deteriorated beam quality due to the involvement of a higher order lateral mode. The kink power of the 10-µm-ridge laser can be further increased by decreasing the front facet reflectivity from 2.5% to 0.5%.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 TRUMPF Laser GmbH, Niederlassung Berlin, 12489 Berlin, Germany
Diode lasers, gallium arsenide, high power, ridge-waveguide lasers, single-spatial mode operation, quantum well lasers.
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