High-brightness quantum well and quantum dot tapered lasers
N. Michela, M. Krakowskia, I. Hassiaouia, M. Calligaroa, M. Lecomtea, O. Parillauda, P. Weinmannb, C. Zimmermannb, W. Kaiserb, M. Kampb, A. Forchelb, E.-M. Pavelescuc, J.-P. Reithmaierc, B. Sumpfd, G. Erbertd, M. Kelemene, R. Ostendorfe, J.-M. García-Tijerof, H. Odriozolaf, I. Esquiviasf
Published in:
Proc. SPIE, vol. 6909, no. 690918 (2008).
Abstract:
Several types of high-brightness near-infrared tapered quantum well and quantum dots tapered lasers are reviewed and compared. Recent developments include record-high brightness quantum well tapered lasers at 810 nm and 975 nm (up to 8.3 W CW, diffraction limited), high wall-plug efficiency gain-guided and index-guided tapered lasers (up to 57%), narrow slow axis far-field (2.5° FWHM) index-guided tapered lasers at 975 nm, wavelength-stable (down to 0.09 nm/K), high-brightness quantum dots tapered lasers at 920 and 975 nm, and quantum dots tapered laser bars (up to 14 W CW) at 920 nm, with narrow far-field in the slow axis (3° FWHM).
a Alcatel-Thales III-V Lab, Route Départementale 128, 91767 Palaiseau, France
b Technische Physik, Universität Wuerzburg (UWUERZ), 97070 Wuerzburg, Germany
c Institute of Nanostructure Technologies and Analytics, Universität Kassel, Heinrich-Plett-Str. 40, D-34132, Kassel, Germany
d Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
e Fraunhofer Institut für Angewandte Festkörperpohysik (IAF), Tullastraße 72, 79108, Freiburg, Germany
f Universidad Politécnica de Madrid (UPM), ETSI Telecomunicacíon, Madrid 28040, Spain
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