G. Erbert, F. Bugge, B. Eppich, J. Fricke, K-H. Hasler, K. Paschke, A. Pietrzak, H. Wenzel, and G. Tränkle

Published in:

Proc. SPIE, vol. 6909, no. 69090P (2008).

Abstract:

A narrow vertical divergence of about 30° including 95% of power is highly desired in many applications. Principal designs for narrow divergence diode lasers like simple broad waveguide and more sophisticated resonant waveguide structures are discussed. Devices with narrow divergence could be realized in the wavelength range 800nm to 1060nm using very broad waveguide structures. More than 1W in fundamental mode and about 5W nearly diffraction limited output could be achieved from ridge waveguide laser and from diode lasers with tapered resonator structure, respectively.

Keywords:

Diode laser, beam quality, GaAs, semiconductor technology, waveguide structures, resonator

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