T. Kettler¹, K. Posilovic¹, L.Ya. Karachinsky¹, P. Ressel², A. Ginolas², J. Fricke², U.W. Pohl¹, V.A. Shchukin¹, N. N. Ledentsov¹, D. Bimberg¹, J. Jönsson³, M. Weyers², G. Erbert², and G. Tränkle²

Published in:

IEEE J. Sel. Top. Quantum Electron., vol. 15, no. 3, pp. 901-908 (2009).

Abstract:

Lasers with a waveguide based on a longitudinal photonic band crystal designed for 850 nm emission are investigated. They demonstrate ultranarrow vertical beam divergence of about 7° full-width at half maximum without using corrective optics. A high internal efficiency of 93% is achieved. Broad-area 50-µm wide stripe lasers with unpassivated facets show a high total output power of about 20 W in pulsed mode with far-field divergences of 9.5° and 11.3° of the slow and fast axis, respectively, equivalent to an ultrahigh brightness of 3 × 10⁸ W·cm^-2·sr^-1 and a low aspect ratio of only 1.2. Narrowridge lasers with 5µm stripes demonstrate more than 1.5 W maximum output power in continuous-wave operation. Large arrays with up to 256 uncoupled single-mode laser diodes demonstrate low threshold currents of about 70 mA per laser, independent of the number of lasers in the array.

Index Terms:

High brightness, high-power lasers, photonic band crystal, semiconductor laser arrays, semiconductor lasers, single-mode semiconductor lasers.

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