GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate
C. Kuring1, M. Wolf2, X. Geng1, O. Hilt2, J. Böcker1, J. Würfl2, and S. Dieckerhoff3
IEEE Trans. Power Electron., vol. 37, no. 10, pp. 11896-11910 (2022).
Power electronic systems employing wide-bandgap GaN transistors promise high efficiency operation and power density but require minimized parasitic circuit elements and an effective cooling concept. This article presents a half-bridge module integrating two 600 V/170 mΩ gallium nitride (GaN) high-electron mobility transistors with their gate drive stages and a fraction of the dc-link capacitance on a patterned multilayer polycrystalline AlN-substrate. The high-voltage isolation at a layer distance of 10 µm and a dense chip-by-chip integration on the GaN half-bridge module enable a compact lateral commutation loop design combined with improved cooling capability of the power transistors. Consequently, the GaN half-bridge module allows for higher load currents at lower device temperature while most parasitic circuit elements are reduced compared to a conventional printed circuit board (PCB) design. The parasitic circuit elements of the GaN half-bridgemodule and a reference four-layer PCB half-bridge are evaluated using 3D-FEM field simulation and in-circuit measurements. Selected finite element method (FEM) simulation results are validated by S-parameter measurements and further used to parametrize a lumped commutation loop model. The thermal characterization of the GaN half-bridgemodule validates the improved cooling capability of the GaN half-bridge power module. Transient switching characteristics are studied in hard-switching mode. The device temperature and converter efficiency are evaluated in dc/dc buck-converter operation.
1 Technische Universität Berlin, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, 12489 Berlin, Germany
3 Technical University of Berlin, 10829 Berlin, Germany
Inductance, integrated circuit design, converters, multichip modules, switched circuits.
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