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GaAs-based wide-aperture single emitters with 68 W output power at 69% efficiency realized using a periodic buried-regrown-implant-structure

B. King, S. Arslan, A. Boni, P.S. Basler, C. Zink, P. Della Casa, D. Martin, A. Thies, A. Knigge and P. Crump

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Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2023), Munich, Germany, Jun. 26-30, ISBN: 979-8-3503-4599-5, cb-11-1 (2023).


Increased optical output power Popt from single broad area GaAs-based diode lasers is demanded for material processing, with higher Popt and cost reduction in €/W enabled by using devices with ever-wider apertures [1]. Device structures suitable for single emitters with very large footprints (> 4 mm2) that sustain high Popt and conversion efficiency ηE without exciting unwanted optical modes (e.g. ring oscillations) are also of interest as an enabling technology for high power photonic crystal surface emitting lasers [2]. We report here progress in broad area diode lasers with resonator length L = 4 mm and emitting aperture of W = 1200 µm with wavelength λ = 915 nm.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

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