Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy
E. Richter1 , Ch. Hennig1, U. Zeimer1, M. Weyers1, G. Tränkle1, P. Reiche2, S. Ganschow2, R. Uecker2, and K. Peters3
Published in:
phys. stat. sol. (c), vol. 3, no. 6, pp. 1439-1443 (2006).
Abstract:
(100) γ-lithium aluminium oxide substrates of two inch diameter were fabricated from crystals grown by the Czochralski technique. Onto these substrates c-plane GaN with a thickness of about 200 µm has been grown by hydride vapour phase epitaxy in a horizontal AIX HVPE reactor. The GaN layer spontaneously separates from the bottom lithium aluminium oxide substrate during the cool-down resulting in complete freestanding 2 inch GaN wafers.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Institut für Kristallzüchtung, Max Born-Str. 2, 12489 Berlin, Germany
3 CrysTec GmbH, Köpenicker Str. 325, 12555 Berlin, Germany
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