Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor
M. Zorn1 , F. Bugge1, T. Schenk2, U. Zeimer1, M. Weyers1 and J.-T. Zettler2
Published in:
Semicond. Sci. Technol., vol. 21, no. 9, pp. L45–L48 (2006).
Abstract:
The growth of InGaAs quantum wells (QWs) on GaAs was optimized in situ using a high-resolution curvature sensor in metal-organic vapour phase epitaxy. The very small change in substrate curvature due to the incorporated strain induced by the only 6 nm thin QWs was clearly resolved and can be confirmed by strain theory. Furthermore, the possibility of in situ adjustment of strain compensation using a GaAsP layer is evaluated. The growth of the GaAsP layer was stopped exactly after the in situ curvature measurement indicated a full strain compensation by reaching the initial curvature value before growth of the QWs was started. Ex situ x-ray diffraction measurements confirm the exact and full strain compensation.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 LayTec GmbH, Helmholtzstr. 13-14, D-10587 Berlin, Germany
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