EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling
T.K. Johansen1, R. Doerner2, N. Weimann2, M. Hossain2, V. Krozer2 and W. Heinrich2
Published in:
Int. J. Microwave Wireless Technolog., vol. 10, no. 5-6, pp. 700-708 (2018).
Abstract:
In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.
1 Department of Electrical Engineering, Electromagnetic Systems Group, DK-2800 Kgs. Lyngby, Denmark
2 Ferdinand-Braun-Institut (FBH), Leibniz-Institut f&ür Höchstfrequenztechnik, D-12489 Berlin, Germany
Keywords:
Electromagnetic (EM) simulation; equivalent circuit; InP DHBT; small-signal modeling; transferred-substrate
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