Y.-F. Tsao1,2, H.-S. Hsu3, J. Würfl2, and H.-T. Hsu1,4
IEEE Access, vol. 10, pp. 77826-77836, doi:10.1109/ACCESS.2022.3193695 (2022).
This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly adopted for data rate enhancement. In such configuration, operation at both bands of the 5G frequency range 2 (FR2) spectrum is often necessary. The stacked-FET topology was adopted for mitigation of the gain roll-off with frequency to achieve similar performance at both frequency bands. Implemented in the commercial 0.15-µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology, the PA delivered a small signal gain of 18.5/18 dB, an output power at saturation (Psat) of 28.5/28.2 dBm, and a peak power-added efficiency (PAE) of 39%/36% at 28/38 GHz, respectively. The measurement results have demonstrated great potential of the proposed PA for 5G NR applications.
1 International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
3 Department of Electronic Engineering, Feng-Chia University, Taichung 407102, Taiwan
4 Industry Academia Innovation School, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
Dual-band, fifth generation, new radio, pHEMT, stacked-FET.
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