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Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching

J. Böcker1, K. Tetzner2, S. Heucke1, O. Hilt2, E. Bahat-Treidel2, S. Dieckerhoff1 and J. Würfl2

Published in:

Electron. Lett., vol. 56, no. 16, pp. 838-840 (2020).


Static characterisation and fast switching processes of lateral β-Ga2O3 metal oxide semiconductor field-effect transistors (MOSFETs) are presented. The investigated transistors with 10 mm gate width and 6 µm gate drain distance achieve on-state resistances of 5 Ω and saturation currents above 2.4 A. Hard switching in a double pulse test setup with an inductive load results in voltage slopes up to 65 V/ns at 300 V input voltage. After longer blocking times and higher DC voltages, a strong dynamic increase in on-state resistance occurs. Switching with an ohmic load and different load currents reveals only minor influence of the hot electron mechanism during the hard turn on. However, a clear influence of the turn-on gate drive voltage on the dynamic increase is observed, indicating a shift of the transfer characteristic due to charge trapping in the gate region.

1 Technische Universität Berlin, Power Electronics Group, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany


ohmic contacts, MOSFET, contact resistance, gallium compounds

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