Comparison of the static characteristics of GaN HEMTs with different gate technologies and the impact on modeling
X. Genga, N. Wieczoreka, C. Kuringa, O. Hiltb, M. Wolfb, and S. Dieckerhoffa
Published in:
IEEE 10th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Charlotte, NC, USA, Dec. 4-6, ISBN 979-8-3503-3713-6 (2023).
Abstract:
This paper comprehensively studies the impact of different gate technologies on the static characteristics of GaN-HEMTs by comparing three transistors: 1) a GaN-on-SiC transistor fabricated by Ferdinand-Braun-Institut, which has an Ir-based Schottky gate, 2) a GaN-on-Si transistor from GaN Systems with a Schottky contact p-GaN gate and 3) a GaN-on-Si Gate Injection Transistor (GIT) from Infineon with an ohmic contact p-GaN gate. These three types of GaN transistors are further compared with a SiC-MOSFET and a Si-MOSFET. In addition, the impact of different gate technologies on modeling is studied.
a Chair of Powe Electronics Technische Universität Berlin, Berlin, Germany
b Leibniz-Institut für Höchstfrequenztechnik, Ferdinand-Braun-Institut, Berlin, Germany
Keywords:
Gallium Nitride (GaN), Device characterisation, HEMT, p-GaN, Schottky-type
Copyright © IEEE 2023. All rights reserved.
Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.
Rightslink® by Copyright Clearance Center
Full version in pdf-format.