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Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices

K. Tetznera, O. Hilta, A. Poppb, S. Bin Anoozb, J. Würfla

Published in:

Microelectron. Reliab., vol. 114, pp. 113951 (2020).


In this work, the fabrication of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si-doped homoepitaxial layers on (100) Mg-doped semi-insulating β-Ga2O3 substrates is demonstrated. Furthermore, the influence of additional gate and source field-plates is analyzed in regards to the breakdown properties of the MOSFET devices. The comparative study reveals comparable transistor performances of devices with and without field-plates showing maximum drain currents, on/off-current ratios and ON-resistances of ∼75 mA/mm, 109 and 110 Ω·mm, respectively. Moreover, both MOSFET structures show comparable breakdown voltages at around 1200 V which equals an average breakdown field strength of 2 MV/cm emphasizing no influence of the field-plates on the breakdown properties. Analysis of the thin film composition by secondary ion mass spectrometry on the processed β-Ga2O3 wafers indicates an increased concentration of silicon dopants at the interface between epitaxial layer and substrate. Our findings suggest that this might be the current main limitation factor in reaching higher breakdown voltages using field-plated β-Ga2O3 MOSFET devices.

a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
b Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany


Power electronics, Ga2O3, Transistor, Breakdown, Metal oxide.

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