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Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

B. King, S. Arslan, A. Boni, P. Della Casa, D. Martin, A. Thies, A. Knigge, P. Crump

Published in:

Proc. of SPIE, vol. 12403, High-Power Diode Laser Technology XXI, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124030J (2023).

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

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