Assessment of high-power kW-class single-diode bars for use in highly efficient pulsed solid-state laser systems
A. Lucianettia, J. Pilara,c, A. Pranovicha,c, M. Divokya, T. Moceka, K. Ertelb, H. Jelinkova,c, P. Crumpd, C. Frevertd, R. Stasked, G. Erbertd, and G. Tränkled
Published in:
Proc. SPIE 9348, Photonics West, San Francisco, USA, Feb. 07-12, 934811 (2015).
Abstract:
In this work, we present measurements of efficiency-optimized 940 nm diode laser bars with long resonators that are constructed with robustly passivated output facets at the Ferdinand-Braun-Institut (FBH). The measurements were performed at room temperature on a test bench developed at HiLASE Centre, as a function of operating condition. The single-diode bars generated > 1.0 kW when tested with 1 ms pulses at 1-10Hz operating frequency, corresponding to > 1 J per pulse. The maximum electrical-to-optical efficiency was > 60 %, with operating efficiency at 1 kW of > 50%, limited by the ∼ 200 µΩO resistance of the bar packaging. In addition, slow axis divergence at 1 kW was below 6° FWHM and spectral width at 1 kW was below 7 nm FWHM, as needed for pumping Yb-doped solid state amplifier crystals.
a HiLASE Centre, Institute of Physics ASCR, Za Radnicí 828, 25241 Dolní Brezany, Czech Republic
b STFC Rutherford Appleton Laboratory, Didcot, OX11 0QX, United Kingdom
c Department of Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Brehova 7, 11519, Prague, Czech Republic
d Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
high efficiency, high-power diode lasers, semiconductor.
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