M. Rudolph, R. Behtash, R. Doerner, K. Hirche, J. Würfl, W. Heinrich, G. Tränkle

Published in:

IEEE Trans. Microwave Theory Tech., vol.55, no. 1, pp. 37-43 (2007).

Abstract:

This paper presents a detailed analysis of the stressing mechanisms for highly rugged low-noise GaN monolithic-microwave integrated-circuit amplifiers operated at extremely high input powers. As an example, a low-noise amplifier (LNA) operating in the 3-7-GHz frequency band is used. A noise figure (NF) below 2.3 dB is measured from 3.5 to 7 GHz with NF 1 8 dB between 5-7 GHz. This device survived 33 dBm of available RF input power for 16 h without any change in low-noise performance. The stress mechanisms at high input powers are identified by systematic measurements of an LNA and a single high electronmobility transistor in the frequency and time domains. It is shown that the gate dc current, which occurs due to self-biasing, is the most critical factor regarding survivability. A series resistance in the gate dc feed can reduce this gate current by feedback, and may be used to improve LNA ruggedness.

Index Terms:

Amplifier noise, integrated-circuit noise, microwave field-effect transistor (FET) amplifiers, monolithic-microwave integrated-circuit (MMIC) amplifiers, noise, semiconductor device noise.

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