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An Injection-Lockable InP-DHBT Source Operating at 421 GHz with -2.4 dBm Output Power and 1.7% DC-to-RF Efficiency

A. Possberg1, F. Vogelsang2, N. Pohl2, M. Hossain3, H. Yacoub3, T.K. Johansen4,3, W. Heinrich3, N. Weimann1,3

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Denver, USA, Jun. 19-24, ISBN 978-1-6654-9613-1, pp. 336-339 (2022).


In this work, an injection-lockable push-push oscillator operating at 421 GHz is presented. The circuit is based on a 0.5 µm transferred substrate InP DHBT MMIC process. A peak output power of -2.4 dBm is measured at 34.6 mW DC-power consumption, resulting in 1.7% DC-to-RF conversion efficiency. The oscillator can be injection-locked through a dedicated locking port which, along with the compact core measuring 0.53 × 0.49 mm2, makes this design suitable for efficient injection-locked oscillator arrays comprising a beam steering function by phase tuning.

1 Department for High Frequency Components, Universität Duisburg-Essen, Germany
2 Institute of Integrated Systems, Ruhr-Universität Bochum, Germany
3 Ferdinand-Braun-Institut (FBH), Germany
4 Technical University of Denmark, Denmark


InP, HBT, Injection Locking, Oscillator, MMIC, sub-THz, THz.

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