An Injection-Lockable InP-DHBT Source Operating at 421 GHz with -2.4 dBm Output Power and 1.7% DC-to-RF Efficiency
A. Possberg1, F. Vogelsang2, N. Pohl2, M. Hossain3, H. Yacoub3, T.K. Johansen4,3, W. Heinrich3, N. Weimann1,3
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., Denver, USA, Jun. 19-24, ISBN 978-1-6654-9613-1, pp. 336-339 (2022).
Abstract:
In this work, an injection-lockable push-push oscillator operating at 421 GHz is presented. The circuit is based on a 0.5 µm transferred substrate InP DHBT MMIC process. A peak output power of -2.4 dBm is measured at 34.6 mW DC-power consumption, resulting in 1.7% DC-to-RF conversion efficiency. The oscillator can be injection-locked through a dedicated locking port which, along with the compact core measuring 0.53 × 0.49 mm2, makes this design suitable for efficient injection-locked oscillator arrays comprising a beam steering function by phase tuning.
1 Department for High Frequency Components, Universität Duisburg-Essen, Germany
2 Institute of Integrated Systems, Ruhr-Universität Bochum, Germany
3 Ferdinand-Braun-Institut (FBH), Germany
4 Technical University of Denmark, Denmark
Keywords:
InP, HBT, Injection Locking, Oscillator, MMIC, sub-THz, THz.
Copyright © 2022 by IEEE. All rights reserved.
Copyright and Reprint Permission: Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923. For reprint or republication permission, email to IEEE Copyrights Manager at pubs-permissions@ieee.org.
Full version in pdf-format.