A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network
S. Preis1, A. Wiens2, E. Lia3, W. Heinrich1, R. Jakoby2, H. Maune2, O. Bengtsson1
Published in:
48th European Microwave Conference (EuMC 2018), Madrid, Spain, Sep. 25-27, pp. 1-4 (2018).
Abstract:
Thick-film barium-strontium-titanate varactors package-integrated with GaN HEMTs are high-efficiency and robust tunable devices that enable frequency agility and efficiency optimization. The tunable transistors presented here achieve 44.4 dBm output power, a peak PAE of 77% and a PAE configurability of 5.6 percentage points. Tunability in saturation remains almost constant for temperature and frequency sweeps from 20 to 80°C and 1.5 to 2.45 GHz, respectively. LTE and WCDMA measurements of the modules used in a power amplifier show good linearity results with -45 dBc ACLR for signals with a high peak-to-average power ratio of 9 dB, no degradation due to the varactors is observed.
1 Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, 12489 Berlin, Germany
2 Technische Universitaet Darmstadt, Institut fuer Mikrowellentechnik und Photonik, 64283 Darmstadt, Germany
3 European Space Agency, ESTEC, 2200AG Noordwijk, The Netherlands
Keywords:
Barium-Strontium-Titanate (BST), Ferroelectric films, Gallium nitride (GaN), HEMTs, Power amplifiers, Power transistors, Tunable circuits, Varactors.
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