B. Sumpf, L.S. Theurer, M. Maiwald, A. Müller, A. Maaßdorf, J. Fricke, P. Ressel, and G. Tränkle

Published in:

Appl. Opt., vol. 60, no. 18, pp. 5418-5423, doi:10.1364/AO.422688 (2021).

Abstract:

Wavelength stabilized distributed Bragg reflector (DBR) tapered diode lasers at 783 nm will be presented. The devices are based on GaAsP single quantum wells embedded in a large optical cavity leading to a vertical far field angle of about 29° (full width at half maximum). The 3-inch (7.62 cm) wafers are grown using metalorganic vapor phase epitaxy. In a full wafer process, 4 mm long DBR tapered lasers are manufactured. The devices consist of a 500 µm long 10th order surface DBR grating that acts as rear side mirror. After that, a 1 mm long ridge waveguide section is realized for lateral confinement, which is connected to a 2.5 mm long flared section having a full taper angle of 6°. At an injection current of 8 A, a maximum output power of about 7 W is measured. At output powers up to 6 W, the measured emission width limited by the resolution of the spectrometer is smaller than 19 pm. Measured at 1/e² level at this output power, the lateral beam waist width is 11.5 µm, the lateral far field angle 12.5°, and the lateral beam parameter M² 2.5. The respective parameters measured using the second moments are 31 µm, 15.2°, and 8.3. 70% of the emitted power is originated from the central lobe.

Topics:

Continuous wave operation, Diode lasers, Fiber lasers, Laser materials processing, Laser sources, Master oscillator power amplifiers

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