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1.17 GW/cm2 AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

M. Wolf, F. Brunner, C. Last, H. Halhoul, D. Rentner, E. Bahat Treidel, J. Würfl, and O. Hilt

Published in:

IEEE Electron Device Lett., vol. 45, no. 6, pp. 1048-1051 (2024).


AlN-based GaN-channel HEMTs with MOCVD-grown AlGaN/GaN/AlN epistack were realized on AlN substrates, achieving 400 mA/mm current density at VGS = 1 V and 125 V/µm breakdown voltage (VBr) scaling. Unlike for similar AlN-on-SiC devices, the high VBr scaling also applies above 1000 V. This is attributed to the significantly reduced AlN-buffer defect density. A record power density of 1.17 GW/cm2 is extracted from a device with 2.2 kV breakdown voltage. High-voltage switching transients at 0.6 A / 464 V off-state voltage show dispersions effects attributed to the AlN-buffer/GaN-channel interface quality.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Index Terms:

AlN-on-AlN, AlN-buffer, GaN-channel, mono-crystalline, AlN bulk, homoepitaxy, power electronics.

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