RF challenges for 5G deployment
Dr. Marta Martínez Vázquez
IMST GmbH
Institutskolloquien 2018
Exploring the efficiency limitations of semiconductor diode lasers
Prof. Stephen Sweeney
University of Surrey, UK
Beam quality and reliability of high-power broad-area laser diodes subject to external optical feedback
Simon Rauch
Trumpf Laser GmbH
Growth and properties of GaAs/(In,Ga)As core-shell nanowire arrays on Si
Dr. Hanno Küpers
Paul-Drude-Institut für Festkörperphysik
Depth resolved label-free multimodal optical imaging to study morpho-molecular composition in tissue
Angelika Unterhuber (Ass.-Prof. Dipl.-Ing. Dr.)
Center for Medical Physics and Biomedical Engineering der Medizinischen Universität Wien
InAs and Sb:InAs submonolayer quantum dots: A highly nonlinear active medium for optoelectronic devices
Dr. Nina Owschimikow
TU Berlin, Institut für Optik und Atomare Physik
Manipulating Photons with Photonic Crystals - From Fundamental to Photonic Crystal Lasers -
Prof. Susumu Noda
Kyoto University, Japan
Broadband InP DHBT Millimeter-wave Integrated Circuit (MMIC) Components for DC-300 GHz Frequency Range
Tanjil Shivan
Ferdinand-Braun-Institut, Berlin
Breakthrough in neutron backscattering spectroscopy: A tenfold enhanced energy resolution using GaAs
Dr. Kristijan Kuhlmann
Friedrich-Alexander University Erlangen-Nürnberg and
Institut Laue-Langevin, Grenoble, France
ASM GaN: New Industry Standard Compact Model for GaN RF and Power Devices
Prof. Sourabh Khandelwal
Macquarie University, Sydney
Digitale Holografie mit mehreren Wellenlängen: Grundprinzip und Vorteile für den Zahnarzt
Dr. Alexander Knüttel
VOCO GmbH
Wellenlängenstabilisierte Grundmode Laser für Hochleistungsanwendungen
Martin Wilkens
Ferdinand-Braun-Institut
Simulationen von Breitstreifenlasern basierend auf einem Wanderwellenmodell
Anissa Zeghussi
Ferdinand-Braun-Institut
Review of bias-temperature instabilities at the III-N/dielectric interface
Dr. Clemens Ostermaier
Infineon Technologies AG
Exploring the efficiency limitations of semiconductor diode lasers
Prof. Stephen Sweeney
University of Surrey, UK
Neue Hochleistungs-Pikosekunden- und Nanosekunden-Diodenlaser-Impulsquellen
Andreas Klehr, Armin Liero, Thomas Filler
Ferdinand-Braun-Institut, Berlin
Spatially Offset Raman Spectroscopy (SORS) in Clinics, Security and Art
Prof. Pavel Matousek
STFC Rutherford Appleton Laboratory
Statistical Approaches to AlGaN/GaN power device reliability
Dr. Peter Moens
ON Semiconductor Belgium
Erzeugung optischer ps-Pulse mit modengekoppelten CPM-Laserdioden für kompakte THz-Spektroskopiesysteme
Thomas Prziwarka
Ferdinand-Braun-Institut, Berlin
Electromagnetic Simulations of Parasitic Effects in On-Wafer Measurements above 100 GHz
Gia Ngoc Phung
Ferdinand-Braun-Institut Berlin
Brilliant high-power violet-emitting laser diodes – final presentation of project results
P. Perlin, TopGaN
J.-H. Kang, Ferdinand-Braun-Institut
P. Keshet, eagleyard Photonics GmbH
Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Dr. Christian Fuchs
Philipps-University Marburg
Advanced Raman spectroscopic techniques as versatile tool for meat, seawater and bone quality control
Kay Sowoidnich
STFC Rutherford Appleton Laboratory
GaN- a long way to go from crystal growth to substrates for reliable electronic devices: The effects of structural disturbances on the electrical behavior of GaN from a materials perspective
Dr. Elke Meissner
Fraunhofer IISB
Thermal and Electro-Thermal Modeling in Power Electronics: from Device, to Package, to System
Prof. Roberto Menozzi, PhD
The University of Parma
Optimization of GaN Microwave Power Amplifiers with Class-G Supply Modulation
Nikolai Wolff
Ferdinand-Braun-Institut, Berlin
Herausforderungen bei der praktischen Anwendung von GaN Leistungshalbleitern
Martin Krellmann
Beaplas GmbH
Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von GaN und Barium-Strontium-Titanate
Sebastian Preis
Ferdinand-Braun-Institut Berlin
