InP-DHBT-on-BiCMOS Technology With fT/fmax of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources

T. Kraemer1 , I. Ostermay1, T. Jensen1, T.K. Johansen1,2, F.-J. Schmueckle1, A. Thies1, V. Krozer1, W. Heinrich1, O. Krueger1, G. Traenkle1, M. Lisker3, A. Trusch3, P. Kulse3, and B. Tillack3

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Technical University of Denmark, Denmark
3 Innovations for High Performance Microelectronics, Leibniz-Institut fuer innovative Mikroelektronik, 15236 Frankfurt/Oder, Germany

Published in:
IEEE Trans. Electron Devices, vol. 60, no. 7, pp. 2209-2216 (2013).
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Abstract:
This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 µm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.

Index Terms:
BiCMOS integrated circuits, double heterojunction bipolar transistors (DHBT), integrated circuit interconnections, millimeter wave circuits, voltage-controlled oscillators.

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