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Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
L. Redaelli1
, H. Wenzel1, T. Weig2, G. Lükens2, S. Einfeldt1, U.T. Schwarz2, M. Kneissl1,3, G. Tränkle1
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, 79108 Freiburg, Germany
3 Institute for Solid State Physics, Technical University Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Published in:
Conference on Lasers and Electro Optics (CLEO), San Jose, USA, Jun. 9-14, p. CF1F.3 (2013).
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Abstract:
The effect of index antiguiding on GaN-based blue and violet laser diodes has been
investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of
the threshold current density on the ridge etch depth.
OCIS codes:
(140.2020) Diode Lasers; (140.7300) Visible Lasers
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