W-Band Amplifier with 8 dB Gain Based on InPHBT Transferred-Substrate Technology

T. Al-Sawaf, C. Meliani, W. Heinrich, and T. Krämer

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
7th German Microwave Conference (GeMiC 2012), Ilmenau, Germany, Mar. 12-14, paper 1474 (2012).

Abstract:
In this paper, the design and characterization of a single-stage amplifier based on InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) in transferred - substrate technology is reported. The two fingers amplifier,with a total area of 2×0.8×5 µm² and an ft and fmax of 383 and 370 GHz, respectively, exhibits a small signal gain of 8 dB at 90 GHz.

Index Terms:
Amplifier, Double heterojunction, InP HBT, single stage, transferred substrate, W-band.

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