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20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power
B. Sumpf1, J. Fricke1, P. Ressel1, M. Zorn2, G. Erbert1 and G. Tränkle1
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 JENOPTIK Diode Lab GmbH, Max-Planck-Str. 2, 12489 Berlin, Germany
Published in:
Semicond. Sci. Technol., vol. 26, no. 105011 (2011).
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Abstract:
Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be
presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which
is embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. The
devices with a stripe width of 100 µm and a cavity length of 1.5 mm were soldered on
diamond submounts and mounted on standard C-mounts for an efficient heat removal. The test
was performed at a temperature of 15°C over a first period of 10 000 h at 1.1 W followed by a
second period of 10 000 h at 1.2 W. Based on the aging test and assuming a 60% confidence
level, the lower limit of the mean time to failure of 87 000 h was determined for the devices.
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