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CMOS Compatible Medium Voltage LDMOS Transistors for Wireless Applications up to 5.8 GHz
D. Gruner1, R. Sorge2, O. Bengtsson3, G. Boeck1
1 Microwave Engineering Laboratory, Berlin Institute of Technology, Einsteinufer 25, 10587 Berlin, Germany
2 IHP Innovations for High Performance Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
European Microwave Integrated Circuits Conf. (EuMIC 2010), Paris, France, Sep. 27-28, pp. 146-149 (2010).
Copyright © EuMA 2010. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
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Abstract:
The design and characterization of CMOS compatible
medium voltage LDMOS transistors are presented. Devices of
different sizes were fabricated in a 0.25 µm BiCMOS technology
and were characterized in the most important wireless
telecommunication bands up to 5.8 GHz using a load/source pull
measurement setup. Alternative layouts with regards to device
geometry and stabilizing networks were investigated. Some of the
transistors were equipped with on-chip stability networks to
guarantee safe operation over the whole frequency band. This is
shown to be established without substantial performance
degradation. The medium size 1.8 mm device shows state-of-theart
performance over bandwidth with peak drain efficiencies of
51%, 44% at 2.66 GHz, 5.8 GHz providing a saturated output
power of 30.1 dBm, 29.7 dBm. The linearity performance at all
bands was investigated by determining the adjacent channel
power ratio for a WCDMA test signal. The excellent RF
performance achieved is verified in a real design by means of a
hybrid class-AB power amplifier operating at 5.8 GHz.
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