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Analysis, Design, and Evaluation of LDMOS FETs for RF Power Applications up to 6 GHz
D. Gruner1, R. Sorge2, O. Bengtsson3, A. Al Tanany1, and G. Boeck1
1 Microwave Engineering Laboratory, Berlin Institute of Technology, 10587 Berlin, Germany
2 IHP Innovations for High Performance Microelectronics, 15236 Frankfurt (Oder), Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
IEEE Trans. Microwave Theory Tech., vol. 58, no. 12, pp. 4022-4030 (2010).
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Abstract:
The analysis, design, and evaluation of mediumvoltage
laterally diffused metal oxide semiconductor (LDMOS)
transistors for wireless applications up to 6 GHz is presented.
Using an optimized N-LDMOS transistor, power devices of
different transistor geometries were fabricated in a standard
0.25- m bipolar complementary metal oxide semiconductor
(BiCMOS) technology with and without on-chip stabilization
networks. The influences of the finger geometry and the stabilization
networks on the RF performance were studied based
on small-signal and large-signal on-wafer measurements. It was
analytically shown and experimentally verified that transistor
geometries with reduced gate width per finger but higher number
of fingers are advantageous regarding the maximum oscillation
frequency. From the source/load-pull characterization of a 1.8-mm
total gate-width device, state-of-the-art, large-signal performance
with a maximum output power of 29.7 dBm and a peak drain
efficiency of 44% were obtained at 5.8 GHz. Power evaluation of
the LDMOS transistors was also carried out in designed hybrid
power amplifier modules targeted for vehicular wireless LAN
applications. In the 5.8-5.9 GHz band, an output power of 1 W
at 1-dB power compression, an adjacent channel power ratio of
-38 dBc and an error vector magnitude of 3% at 1 dB peak power
compression are reported.
Index Terms:
Laterally diffused metal oxide semiconductor (LDMOS), microwave power amplifiers,
microwave power field-effect transistors (FETs),
monolithic microwave integrated circuit (MMIC) power amplifiers,
metal-oxide semiconductor field-effect transistor (MOSFET) power amplifiers.
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