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Narrow Linewidth DFB Lasers Emitting Near a Wavelength of 1064 nm
S. Spießberger1, M. Schiemangk2, A. Wicht1, H. Wenzel1, O. Brox1, and G. Erbert1
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Institut für Physik, Humboldt-Universität zu Berlin, 10117 Berlin, Germany
Published in:
J. Lightwave Technol., vol. 28, no. 17, pp. 2611-2616 (2010).
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Abstract:
We report on the realization of narrow linewidth high
power DFB diode lasers emitting near 1064 nm in stable longitudinal
and lateral single mode. The linewidth is analyzed in dependence
of the output power for lasers with cavity lengths of 1 and
2 mmby means of a heterodyne beat note technique. The minimum
intrinsic linewidth is 22 kHz FWHM (full width at half maximum,
at 100 µs time scale) for an output power of 150 mW and a cavity
length of 2 mm. The minimum total linewidth is mainly determined
by technical noise and corresponds to 234 kHz FWHM at an output
power of 70 mW. The influence of current noise on the linewidth is
investigated and compared for different cavity lengths. Re-broadening
at high output power is only observed for the contribution of
technical noise to the linewidth. The intrinsic linewidth shows the
theoretically expected 1/Pout-dependence at all power levels.
Index Terms:
Current noise, distributed feedback lasers (DFB), linewidth, semiconductor laser.
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