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Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates
J.-R. van Look1, S. Einfeldt2, O. Krüger2, V. Hoffmann2, A. Knauer2, M. Weyers2, P. Vogt1, and M. Kneissl1
1 Institut für Festkörperphysik, TU Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
IEEE Photonics Technol. Lett., vol. 22, no. 6, pp. 416-418 (2010).
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Abstract:
In this letter, a novel method for the fabrication of
high-quality facets for III-nitride lasers grown on c-plane sapphire
substrates as well as on GaN substrates is presented. Based
on a laser scribing process gain-guided laser diodes with smooth
facets were fabricated, which showed threshold current densities
of 6.5 kA/cm2 at an emission wavelength of 405 nm under pulsed
operation.
Index Terms:
Cleaved facets, GaN, III-nitrides, InGaN, laser ablation, laser diodes, laser micromachining, laser scribing, materials
processing, sapphire, semiconductor lasers.
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