Room temperature 633 nm tapered diode lasers with external wavelength stabilisation

Published in:
IET Optoelectron., vol. 3, no. 6, pp. 320-325 (2009).
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Abstract:
Small-sized modules that have an output power P > 100 mW with a spectral width <0.25 pm at 15°C are presented. The modules, aimed at HeNe laser applications, are stabilised at 632.8 nm with reflective volume Bragg gratings at the rear side of a tapered gain medium. The gain medium consists of AlGaInP layers grown on GaAs with metal-organic vapour-phase epitaxy, which allows for an emission between 629 and 636 nm in an external cavity configuration. Free running tapered lasers from the same material achieve a room temperature continuous wave emission P > 400 mW near 633 nm and operate for more than 1000 h at 200 mW.

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