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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement
E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Published in:
IEEE Trans. on Electron Devices, vol. 55, No. 12, pp. 3354-3359, (2008).
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Abstract:
In this paper, we present an enhancement of
punchthrough voltage in AlGaN/GaN high-electron-mobilitytransistor
devices by increasing the electron confinement in the
transistor channel using an AlGaN buffer-layer structure. An optimized
electron confinement results in a scaling of punchthrough
voltage with device geometry and a significantly reduced subthreshold
drain leakage current. These beneficial properties are
pronounced even further if gate-recess technology is applied for
device fabrication. Physical-based device simulations give insight
in the respective electronic mechanisms.
Index Terms:
AlGaN/GaN high-electron-mobility transistor
(HEMT), breakdown voltage, double heterojunction (DH), gate
recess, punchthrough voltage, scale-up.
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