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Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes
A. Knauer1, H. Wenzel1, T. Kolbe2, S. Einfeldt1, M. Weyers1, M. Kneissl1,2, G. Tränkle1
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Published in:
Appl. Phys. Lett., vol. 92, no. 191912 (2008).
© Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Abstract:
The electroluminescence from near ultraviolet (UV) light emitting diodes containing InGaN
multiple quantum wells (MQWs) with GaN, AlGaN, and InAlGaN barriers was investigated. Based
on band-structure calculations the observed wavelength shift in the peak emission with increasing
injection current is attributed to the screening of the polarization fields and to band gap
renormalization. InGaN MQWs with almost zero net polarization have been realized. No blueshift
in the emission spectra of these devices was observed over the entire current range.
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