Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements

F. Brunner^a, V. Hoffmann^a, A. Knauer^a, E. Steimetz^b, T. Schenk^b, J.-T. Zettler^b and M. Weyers^a

^a Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
^b LayTec GmbH, Helmholtzstr. 13-14, D-10587 Berlin, Germany

Published in:
J. Cryst. Growth, vol. 298, pp. 202-206 (2007).
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Abstract:
We employed a newly developed wafer-selective curvature, reflectance and temperature sensor (EpiCurveTT^®) in an AIX2600HT Planetary Reactor^®. Growth of GaN on sapphire as well as AlGaN and InGaN heterostructures with different material compositions were monitored in real time. During growth of a laser-diode text structure the impact of water curvature on wavelength uniformity across the water is demonstrated. Here, the known drastic dependence of indium incorporation on growth temperature requires a uniform substrate surface temperature and therefore a flat wafer during growth of the MQW region. Wafer bowing depending on substrate properties, growth temperature and the insertion of a strain-compensating interlayer is carefully examined to optimize the growth procedure.

Keywords:
A1. In situ characterization; A3. Metalorganic vapor-phase epitaxy; B1. Nitrides

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