Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description
IEEE Trans. Microwave Theory Tech., vol. 61, no. 7, pp. 2603-2609 (2013).
© Copyright 2013 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
A comprehensive electro-thermal model of a packaged GaN high electron-mobility transistor (GaN-HEMT) is presented. It includes an RF large-signal description, as well as thermal coupling between the individual cells of a powerbar. Thus, it allows studying the inhomogeneous RF power distribution and other effects within the transistor. The model is verified and applied to a 50-W GaN-HEMT powerbar. The model proves to represent a versatile tool for transistor design. Important features of the new version compared to existing versions are its capability to predict internal electrical instabilities and to allow for optimization of the cell combining.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Ulrich-L.-Rohde Chair for RF and Microwave Techniques, Brandenburg University of Technology, 03046 Cottbus, Germany
Electro-thermal model, GaN high electron-mobility transistors (GaN-HEMTs), large-signal modeling, power transistors.