Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description

F. Schnieder1, O. Bengtsson1, F.-J. Schmückle1, M. Rudolph2, and W. Heinrich1

Published in:

IEEE Trans. Microwave Theory Tech., vol. 61, no. 7, pp. 2603-2609 (2013).

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A comprehensive electro-thermal model of a packaged GaN high electron-mobility transistor (GaN-HEMT) is presented. It includes an RF large-signal description, as well as thermal coupling between the individual cells of a powerbar. Thus, it allows studying the inhomogeneous RF power distribution and other effects within the transistor. The model is verified and applied to a 50-W GaN-HEMT powerbar. The model proves to represent a versatile tool for transistor design. Important features of the new version compared to existing versions are its capability to predict internal electrical instabilities and to allow for optimization of the cell combining.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Ulrich-L.-Rohde Chair for RF and Microwave Techniques, Brandenburg University of Technology, 03046 Cottbus, Germany

Index Terms:

Electro-thermal model, GaN high electron-mobility transistors (GaN-HEMTs), large-signal modeling, power transistors.