Extreme Triple Asymmetric (ETAS) Epitaxial Designs for Increased Efficiency at High Powers in 9xx-nm Diode Lasers

T. Kaul, G. Erbert, A. Maaßdorf, D. Martin, P. Crump

Published in:

Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140A (2018).

© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the SPIE.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany