Experience has shown us that each completed product can only be as good as the individual steps taken to produce it. That's why we carefully design, monitor and adjust every single process step, starting with epitaxial layer growth to yield the targeted device properties. Our institute uses state-of-the-art equipment in a high-performance cleanroom environment – for arsenide- as well as nitride-based devices, accompanied by comprehensive material analysis.

We have compiled an overview on our extensive activities in materials technology for III-V semiconductors.

I wish you an inspiring reading, Günther Tränkle