Forschung im Fokus (nur in Englisch verfügbar)

Advanced UV for life - novel ultraviolet light sources to the market

Bringing tailored ultraviolet (UV) light sources for medicine, water treatment, and sensors into the market is the objective of the "Advanced UV for Life" consortium, coordinated by FBH. This concept convinced the jury of the "Zwanzig20" competition funded by the Federal Ministry of Education and Research with up to 45 million Euros for the next five years. Today, 22 partner from research and industry crosslink their expertise from materials to components to systems. Thus, major partners in the field of UV light sources joined forces to develop the required UV technology for new applications.

For example, 310 nm UV-B LEDs developed by the FBH shall be further advanced within the cooperation. The LEDs, which can be used for production technologies like UV curing, deliver a large output power of 10 mW from a single chip due to optimized processing and mounting technology. The chips were then packaged by the industrial partner OSA Opto Light. Within "Advanced UV for Life", the research and industrial partners aim to further develop such LEDs regarding additional wavelengths for further application fields.

Further information:

  • mehr... (in Deutsch, FBH-Nachricht vom 18.07.2013)
  • Presseinformation (in Deutsch, 18.07.2013, Senatsverwaltung für Wirtschaft, Technologie & Forschung)
  • Unternehmen Region - Advanced UV for Life (in Deutsch)
  • Presseinformation (in Deutsch, 18.07.2013, zum Wettbewerb, Bundesministerium für Bildung & Forschung)

Ultra-high energy laser bars - record performance in frosty environment

Laser-induced fusion is a promising technology for future energy generation that would lead to a growing demand for large quantities of inexpensive ultra-high energy lasers. Corresponding laser facilities are being planned worldwide. In order to reduce production costs, which mainly arise from the amount of semiconductor material used, high power densities are requested. FBH recently gained particular attention for its research on cryogenic diode lasers: these deliver high optical power densities and at the same time minimize excess heat. The lasers are designed to operate best at low temperatures around 220 K. In this range, the semiconductor properties improve, with the output power and the electro-optical conversion efficiencyηEincreasing, meaning that the heat generation can be reduced. Further improvements were achieved by a new mounting technology. The 1 cm wide diode laser bars were soldered p-down onto a CCP-mount, and the n-side contact was established by a thick copper foil rather than wire-bonds. At 220 K the laser emitted a peak power of 1.7 kW with a conversion efficiency ηE (1.5 kW) = 54 %. This is the highest power ever achieved from a 1 cm bar.

Further information:


P. Crump, C. Frevert, H. Wenzel, F. Bugge, S. Knigge, G. Erbert and G. Tränkle, "Cryolaser: innovative cryogenic diode laser bars optimized for emerging ultra-high power laser applications", Conference on Lasers and Electro Optics (CLEO), San Jose, USA, Jun. 9-14, p. JW1J.2 (2013).

Outlook - Photonics West 2014:

  • Study of waveguide designs for high-power 9xx nm diode lasers operating at 200K Carlo F. Frevert, Paul Crump, Frank Bugge, Steffen Knigge, Götz Erbert • 3 February 2014 • 9:00 - 9:20 AM | Part of SPIE LASE  
  • Performance assessment of high power QCW stacks for the HILASE system Pawel Sikocinski, Antonio Lucianetti, Jan Pilar, Martin Divoky, Paul Crump, Ralph Staske, Tomás Mocek • 4 February 2014 • 6:00 - 8:00 PM | Part of SPIE LASE  
  • Cryogenic ultra-high-power infrared diode laser bars (invited) Paul Crump, Carlo F. Frevert, Frank Bugge, Steffen Knigge, Wolfgang Pittroff, Götz Erbert, Günther Tränkle • 6 February 2014 • 9:10 - 9:40 AM | Part of SPIE OPTO

Signal Sources up to 250 GHz in InP-on-BiCMOS Technology

FBH and IHP in Frankfurt/Oder have further advanced their wafer-level InP-on-BiCMOS technology for broadband operation up to terahertz frequencies. This process combines the advantages of both InP-DHBT and SiGe-BiCMOS technologies. As a result, the first hetero-integrated signal source beyond 200 GHz has been successfully developed. It demonstrates the capability of the new process to realize essential mm-wave functions in the 250 GHz frequency range  on the same chip. The circuit consists of a Voltage Controlled Oscillator (VCO) in BiCMOS technology and a frequency tripler in InP-HBT technology. With the VCO operating at 82 GHz with an output power of approximately 6 dBm, the tripler delivers -10 dBm at 246 GHz. Phase noise of the combined circuit is -87 dBc/Hz at 2 MHz offset.


→ awarded with European Microwave Integrated Conference (EuMIC) Prize 2013

T. Jensen, T. Al-Sawaf, M. Lisker, S. Glisic, M. Elkhouly, T. Kraemer, I. Ostermay, C. Meliani, B. Tillack, V. Krozer, W. Heinrich, "A 164 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology", Proc. 8th European Microwave Integrated Circuits Conf. (EuMIC 2013), Nuremberg, Germany, Oct. 6-8, pp. 244-247 (2013).