Forschungsnews 2020

FBH research: 23.11.2020

Getting polymers in shape – microwave permittivity characterization

Dielectric constant and loss tangent of polymer materials at microwave frequencies are important parameters for various industrial processes. Of particular interest is their temperature dependence. The developed setup allows to measure these properties up to the melting temperature.

FBH research: 19.10.2020

FBH’s high-performance FET-based THz detectors reach user level

Based on its GaN HEMT MMIC process, the FBH develops state-of-the-art TeraFETs. They work at room temperature with excellent sensitivity, comparable to classical diode-based performance. The THz frequency range is attractive for various applications in biology, medicine and industry.

FBH research: 22.09.2020

Milliwatt power 233 nm far-UVC LEDs on sapphire substrates

Far-UVC LEDs are attractive for applications like monitoring of gas concentrations and measurement of nitrite in water. FBH and TU Berlin have developed 233 nm AlGaN-based far-UVC LEDs with previously unattained emission power and lifetime – based on comprehensive optimizations within the LED fabrication chain.

FBH research: 12.08.2020

Hybrid atom traps for high-sensitivity quantum sensors in compact volumes

Atomic quantum sensors enable the measurement of e.g. accelerations or external fields with unprecedented precision. FBH works on miniaturized optical setups to further integrate atom-chip based sensors combined with conceptual studies on the cold atom preparation in hybrid traps.

FBH research: 30.03.2020

Optimized buried Bragg gratings for high-power DFB-BA lasers

High-power, highly efficient broad area diode lasers that are wavelength-stabilized by integrated Bragg gratings are in high demand for example for pumping narrow absorption bands in solid-state lasers. FBH has been conducting intensive research leading to continuous improvements of the institute’s DFB-BA lasers.

FBH research: 17.02.2020

Improved thermal management of InP high-power transistors

InP HBT technology is an ideal candidate for microwave applications in the terahertz range. The FBH uses a transfer substrate process to successfully suppress significant parasitic effects. For further improvements, an in-house diamond wafer bonding process was developed to enhance the thermal management of the wafer.