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High-brightness 635 nm tapered diode lasers with optimized index guiding
D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Published in:
Proc. SPIE, vol. 7583, no. 75830V (2010).
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Abstract:
In this work, we present tapered diode lasers (TPL) emitting near 635 nm with an optimized lateral structure. To improve
the beam quality as well as the output power, we varied the width of the ridge waveguide (RW) and the length of the RW
and taper sections. All diode lasers were mounted p-side down with a common contact for both sections on a CVD-diamond
heat spreader and soldered on C-mounts. Optimized TPLs emit 500 mW cw optical output power at a
wavelength of 640 nm with a beam quality of M2(σ) = 2.6 and M2(1/e2) = 1.8, respectively. A maximum optical output
power of 790 mW could be achieved.
Keywords:
high-power, high-brightness, tapered laser, diode laser, red-emitting.
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