Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes
C. Kaspari, M. Zorn, M. Weyers, G. Erbert
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Published in:
Journal of Crystal Growth 310 23 (2008) 5175-5177.
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Abstract:
GaAs-based laser diodes emitting in the red spectral region have challenging material and thermal
properties when reducing the emission wavelength towards the physical limit around 630 nm. To
improve the properties of such laser diodes, we have optimized the growth parameters of the GaInP
quantum wells (QW) embedded in AlGaInP. The growth temperature and the V/III ratio during growth of
the QW was varied. By reducing the QW growth temperature from 770 to 700°C, an improvement of the
laser performance was achieved at 635 and at 643 nm laser emission wavelength. By increasing the V/III
ratio, a higher photoluminescence intensity could be achieved in QW test samples. Combining both
approaches important laser parameters like threshold current density, differential efficiency and
internal absorption were improved substantially.
Keywords:
A3. Metalorganic vapor phase epitaxy
B2. Semiconducting III-V materials
B3. Laser diodes
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