Y.-F. Tsaoa, Y. Wanga, C.-M. Tsaoa, H.-J. Würflb, H.-T. Hsua
IEEE Asia-Pacific Microwave Conference (APMC), Brisbane, Australia, Nov. 28 - Dec. 1, ISBN 978-1-6654-3782-0, pp. 229-231 (2021).
In this paper, we present a single-pole-double-throw (SPDT) switch design covering X- to Ka-band using series-shunt topology. The stacked-FET configuration was adopted for the series- and shunt-arms to enhance the power handling capability. The number of cells in the stacked-FET configuration was optimized for the best performance across the band of interest. Implemented using 0.15-µm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology provided by WIN Semiconductor, the measured performance showed a maximum insertion loss of 3.2 dB, a minimum isolation of 27 dB, and a minimum input P1dB of 33 dBm with good impedance match at all the ports from 8 to 40 GHz.
a International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
b Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
GaAs pHEMT, SPDT switch, series-shunt, stacked-FET
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