Thinning of semiconductor wafers by means of lapping and polishing from a thickness of about 0.5 mm (500 µm) up to a target thickness of typically 100 µm.
- Lapping and polishing of GaAs, SiC, sapphire and Si
- Working capability for 2", 3" and 4" wafers and parts
- Methods for thickness measurement
- Variation of thickness typically +/- 2 µm on 4" wafers